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HiPerFETTM Power MOSFET
Single MOSFET Die
Preliminary data sheet
IXFN 150N15
VDSS ID25
RDS(on)
= 150 V = 150 A = 12.5 mW
trr 250 ns
Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s T J = 25C to 150C T J = 25C to 150C, RGS = 1MW Continuous Transient TC = 25C Terminal (current limit) TC = 25C; Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C
Maximum Ratings 150 150 20 30 150 100 600 150 60 3 5 600 -55 ... +150 150 -55 ... +150 300 2500 3000 V V V V A A A A mJ J V/ns W C C C C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G = Gate S = Source
D = Drain
Either Source terminal at miniBLOC can be used as Main or Kelvin Source
Features
* International standard package * Encapsulating epoxy meets
UL 94 V-0, flammability classification
* miniBLOC with Aluminium nitride
isolation
* Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS)
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
rated
* Low package inductance * Fast intrinsic Rectifier
Applications
* * * *
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS= 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS= 20V, VGS = 0V VDS= VDSS VGS= 0 V VGS = 10V, ID = 0.5 * ID25 Note 2
Min. 150 2
Characteristic Values Typ. Max. V 4 100 V nA mA mA mW
DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays Advantages
* Easy to mount * Space savings * High power density
TJ = 25C TJ = 125C
100 2 12.5
IXYS reserves the right to change limits, test conditions, and dimensions.
98653 (9/99)
(c) 2000 IXYS All rights reserved
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IXFN 150N10
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK miniBLOC, SOT-227 B miniBLOC, SOT-227 B 0.05 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 R G = 1 W (External), VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 60A, Note 2 Characteristic Values Min. Typ. Max. 50 75 9100 2600 1200 50 60 110 45 360 65 190 0.21 S pF pF pF ns ns ns ns nC nC nC K/W K/W
M4 screws (4x) supplied
Dim. A B C D E F G H J K L M N O P Q Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
miniBLOC, SOT-227 B
Source-Drain Diode (TJ = 25C, unless otherwise specified) Symbol Test Conditions IS ISM VSD t rr Q RM IRM Notes: VGS = 0 Repetitive; pulse width limited by TJM IF = 100 A, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % I F = 50 A, -di/dt = 100 A/ms, V R = 50 V
R S
Characteristic Values Min. Typ. Max. 150 600 1.5 250 1.1 13 A A V ns mC A
T U
1. Pulse width limited by TJM. 2. Pulse test, t 300 ms, duty cycle d 2 %
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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